field domain meaning in English
场畴
场域
Examples
- Experimentally , an interesting six - route ndr characteristic , resulting from the form of split miniband structures and the extension of high - field domain in the superlattice , is observed at room temperature
实验的结果显示，由于此分?迷你带结构及超晶格结构中高场区域的扩展，于常温下可观察出?道轨迹之多重负微分电阻特性。 - The " wavefront " domain decomposition method developed above is used in the division of flow field domain . the quantity of physics variables on the " subjunctive " boundary elements needs mutual communication of subdomains during the simulation
流场区域的划分采用改进的“波阵面”区域分裂算法， “虚拟”边界单元的物理量的计算由子区域之间相互通讯来完成，信息的发送方式采用“循环式”发送方式。 - For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
为获得?多轨迹的负微分电阻，本研究组件使用?相当薄之砷化铟镓?子井，可使四周期磷化铟/砷化铟镓超晶格结构在平带情况下形成三个分?的?子化能阶，且于足够大的操作偏压下在该超晶格结构中形成?高场区域。 - Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基于gaas等?族化合物半导体的转移电子理论，结合半绝缘gaas光电导开关中特有的lock - on效应的研究，提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型，对光电导开关lock - on效应的各种现象给出了理论解释。 - When the applied bias voltage is changed within positive slope regions of u - i curve , the domain boundary between the high and low electric field domains does not moved , and the size of electric field domains regions is also not altered , while the electric field strengths are adjusted
用模拟计算的方法研究了弱耦合掺杂gaaa / alas超晶格在时变电压下的场畴机制和固定偏压下电流自维持振荡。在时变电压下，一定掺杂的超晶格处于稳定的电场畴， u - i曲线呈现锯齿状波形。